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Samsung Plans Aggressive Rollout of Gate-All-Around Technology
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Samsung Plans Aggressive Rollout of Gate-All-Around Technology

Voltage scaling of FinFET technology runs out of steam at 0.75V at the 10nm node. Samsung is implementing its GAA technology – which utilizes nanosheets as opposed to nanowires enabling greater current per stack – in order to reduce the operating voltage to 0.7V, said Yongjoo Jeon a principal engineer with Samsung’s foundry marketing team. Conventional GAA with nanowires requires a larger number of stacks due to its small effective channel width.

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